MRF6S19060NR1 MRF6S19060NBR1
15
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
?
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
?
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
4
Dec. 2008
?
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
?
Changed Storage Temperature Range in Max Ratings table from --65 to +175 to --65 to +150 for
standardization across products, p. 1
?
Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
?
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 220°C to 225°C
in Capable Plastic Package bullet, p. 1
?
Corrected VDS
to VDD
in the RF test condition voltage callout for VGS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
?
Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
?
Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
?
Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
?
Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2
and listed
operating characteristics and location
of MTTF calculator for device, p. 7
?
Replaced Case Outline 1486--03, Issue C, with 1486--03, Issue D, p. 9--11. Added pin numbers 1 through 4
on Sheet 1.
?
Replaced Case Outline 1484--04, Issue D, with 1484--04, Issue E, p. 12--14. Added pin numbers 1 through
4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and
Pin 2 designations.
?
Added Product Documentation and Revision History, p. 15
5
Dec. 2010
?
Corrected data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, and Product Discontinuance Notification number, PCN14260, adding applicable
overlay, p. 1, 2
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功能描述:MOSFET RF N-CH 28V 12W TO272-4 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6S19060MR1
功能描述:MOSFET RF N-CH 28V 12W TO270-4 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
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